To provide the best possible performance, modern infrared photodetector designs necessitate extremely precise modeling of the superlattice absorber region. We advance the Rode’s method for the Boltzmann transport equation in conjunction with the 𝐤.𝐩 band structure and the envelope function approximation for a detailed computation of the carrier mobility and conductivity of layered type-II superlattice structures, using which…
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Neuromorphic computing is inspired by the working of the brain, which performs highly complex tasks while consuming remarkably low power. We employ spintronics to design devices, circuits, and networks to realize hardware implementation of machine learning architectures, i.e., neuromorphic computing. We use our developed hybrid simulation setup to incorporate the diverse physics of spin-transport, magnetization…
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Photodetectors are of utmost importance in optoelectronics and the rising multiplicity of technology calls for new materials and novel device paradigms. This work proposes an optically gated double-gate tunnel field-effect transistor photosensor, employing a monolayer of transition metal dichalcogenide as the channel material. The photodetector works on the principle of band-to-band tunneling, which, we demonstrate,…
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