Photodetectors are of utmost importance in optoelectronics and the rising multiplicity of technology calls for new materials and novel device paradigms. This work proposes an optically gated double-gate tunnel field-effect transistor photosensor, employing a monolayer of transition metal dichalcogenide as the channel material. The photodetector works on the principle of band-to-band tunneling, which, we demonstrate,…
Read more
