Valleytronics using two-dimensional materials

Valleytronics using two-dimensional materials opens unprecedented opportunities for information processing using a valley polarizer as a basic building block. Various methodologies, such as strain engineering, the inclusion of line defects, and the application of static magnetic fields, have been widely explored for creating valley polarization. However, these methods suffer from low transmission or lack of polarization directionality. To overcome the above limitations, we propose an all-electrical valley polarizer using zigzag edge graphene nanoribbons in a multiterminal device geometry. The proposed device can be gate-tuned to operate along two independent regimes: (i) a terminal-specific valley filter that utilizes band-structure engineering, and (ii) a parity-specific valley filter that exploits the parity selection rule in zigzag edge graphene. We show that the device exhibits intriguing physics in the multimode regime of operation affecting the valley polarization; we investigate various factors influencing polarization in wide-device geometries, such as optical analogs of graphene Dirac fermions, angle-selective transmission via 𝑝−𝑛 junctions, and the localization of edge states. Furthermore, we evaluate the performance of the proposed device structures in the presence of Anderson short-range disorder at the edges and the bulk, and we find it to be resilient to edge disorder even for a higher disorder strength. The device geometry is optimized to achieve maximum valley polarization, thereby paving the way for a physics-based tunable valleytronic device.